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EDI8F82046C
2 Megx8 SRAM Module
Features
2 Meg x 8 bit CMOS Static Random Access Memory * Access Times 20 thru 35ns * TTL Compatible Inputs and Outputs * Fully Static, No Clocks High Density Packaging * JEDEC Approved, Revolutionary Pinout * 36 Pin DIP, No. 178 Single +5V (10%) Supply Operation
2 Megabits x 8 Static RAM CMOS, Module with Revolutionary Pinout
The EDI8F82046C is a 16 Megabit CMOS Static RAM based on four 512Kx8 Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate. The EDI8F82046C is packaged in a 36 pin DIP and features the JEDEC approved, revolutionary pinout. All inputs and outputs are TTL compatible and operate from a single 5V supply. Fully asynchronous, the EDI8F82046C requires no clocks or refreshing for operation.1Megx8 Static RAM CMOS, Module
Pin Configurations and Block Diagram
Pin Names
AO-A20 E W G DQO-DQ7 VCC VSS NC
AO-A18 W G
AO A1 A2 A3 A4 E DQO DQ1 VCC VSS DQ2 DQ3 W A5 A6 A7 A8 A9
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
A20 A19 A18 A17 A16 G DQ7 DQ6 VSS VCC DQ5 DQ4 A15 A14 A13 A12 A11 A1O
Address Inputs Chip Enable Write Enable Output Enable Common Data Input/Output Power (+5V10%) Ground No Connection
DQO-DQ7
A19-A20 E
DEC
Electronic Designs Incorporated * One Research Drive * Westborough, MA 01581USA * 508-366-5151 * FAX 508-836-4850 * Electronic Designs Europe Ltd. * Shelley House, The Avenue * Lightwater, Surrey GU18 5RF United Kingdom * 01276 472637 * FAX: 01276 473748 1 EDI8F82046C Rev. 4.0 4/96 ECO#7470
Absolute Maximum Ratings*
Voltage on any pin relative to VSS Operating Temperature TA (Ambient) Commercial Industrial Storage Temperature Power Dissipation Output Current. -0.5V to 7.0V 0C to +70C -40C to +85C -55C to +125C 3.0 Watt 20 mA
Recommended DC Operating Conditions
Parameter Sym Supply Voltage VCC Supply Voltage VSS Input High Voltage VIH Input Low Voltage VIL Min 4.5 0 2.2 -0.3 Typ 5.0 0 --Max Units 5.5 V 0 V 6.0 V 0.8 V
*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
AC Test Conditions
Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load
(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF)
VSS to 3.0V 5ns 1.5V 1TTL =30pF
DC Electrical Characteristics
Parameter Operating Power Supply Current Standby (TTL) Power Supply Current Full Standby Power Supply Current (CMOS) Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage
*Typical: TA = 25C, VCC = 5.0V
Sym ICC1 ICC2 ICC3
ILI ILO VOH VOL
Conditions W, E = VIL, II/O = 0mA, Min Cycle E VIH, VIN VIL VIN VIH E VCC-0.2V VIN VCC-0.2V or VIN 0.2V VIN = 0V to VCC V I/O = 0V to VCC IOH =-4.0mA IOL = 8.0mA
Min ----
Typ* 350 110 20
Max 430 190 30 10 10 -0.4
Units mA mA mA A A V V
--2.4 --
-----
Truth Table
G X H L X E H L L L W X H H L Mode Standby Output Deselect Read Write Output High Z High Z DOUT DIN Power ICC2, ICC3 ICC1 ICC1 ICC1
Capacitance
(f=1.0MHz, VIN=VCC or VSS)
Parameter Sym Address Lines CI Data Lines CD/Q Chip Enable Line CC Write and Output Enable Lines CW
These parameters are sampled, not 100% tested.
Max 30 43 10 32
Unit pF pF pF pF
EDI8F82046C
2Megx8 SRAM Module
2 EDI8F82046C Rev. 4.0 4/96 ECO#7470
EDI8F82046C
2 Megx8 SRAM Module
AC Characteristics Read Cycle
Parameter Read Cycle Time Address Access Time Chip Enable Access Time Chip Enable to Output in Low Z (1) Chip Disable to Output in High Z (1) Output Hold from Address Change Output Enable to Output Valid Output Enable to Output in Low Z (1) Output Disable to Output in High Z(1)
Note 1: Parameter guaranteed, but not tested.
Symbol JEDEC Alt. TAVAV TRC TAVQV TAA TELQV TACS TELQX TCLZ TEHQZ TCHZ TAVQX TOH TGLQV TOE TGLQX TLOZ TGHQZ TOHZ
20ns Min Max 20 20 20 3 10 3 8 0 8
25ns Min Max 25 25 25 3 12 3 10 0 10
Min 35
35ns Max 35 35
3 15 3 12 0 12
Units ns ns ns ns ns ns ns ns ns
Read Cycle 1 - W High, G, E Low
TAVAV A ADDRESS 1 TAVQV Q ADDRESS 2 TAVQX DATA 1 DATA 2
Read Cycle 2 - W High
TAVAV A TAVQV E TELQV TELQX G TGLQV TGLQX Q TGHQZ TEHQZ
3 EDI8F82046C Rev. 4.0 4/96 ECO#7470
AC Characteristics Write Cycle
Symbol JEDEC Alt. TAVAV TWC TELWH TCW TELEH TCW TAVWL TAS TAVEL TAS TAVWH TAW TAVEH TAW TWLWH TWP TWLEH TWP TWHAX TWR TEHAX TWR TWHDX TDH TEHDX TDH TWLQZ TWHZ TDVWH TDW TDVEH TDW TWHQX TWLZ 20ns Min Max 20 15 15 0 0 15 15 15 15 0 0 3 3 0 8 12 12 3 25ns Min Max 25 20 20 0 0 15 15 15 15 0 0 0 0 0 12 15 15 3 35ns Max
Parameter Write Cycle Time Chip Enable to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width Write Recovery Time Data Hold Time Write to Output in High Z (1) Data to Write Time Output Active from End of Write (1)
Note 1: Parameter guaranteed, but not tested.
Min 35 25 25 0 0 20 20 20 20 0 0 0 0 0 20 20 3
15
Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Write Cycle 1 - W Controlled
TAVAV A E TELWH TAVWH TWLWH W TAVWL D TWLQZ Q HIGH Z TDVWH DATA VALID TWHQX TWHDX TWHAX
EDI8F82046C
2Megx8 SRAM Module
4 EDI8F82046C Rev. 4.0 4/96 ECO#7470
EDI8F82046C
2 Megx8 SRAM Module
Write Cycle 2 - E Controlled
E Controlled
A TAVEL E TAVEH TWLEH W TDVEH D Q HIGH Z DATA VALID TEHDX TEHAX TELEH TAVAV
Ordering Information
Standard Power EDI8F82046C20M6C EDI8F82046C25M6C EDI8F82046C35M6C Speed (ns) 20 25 35 Package No. 178 178 178
To order an Industrial grade product substitute the letter C in the Suffix with the letter I, eg. EDI8F82046C25M6C becomes EDI8F82046C25M6I.
Package Description Package No. 178 36 Pin Dual-in-line Package
2.185 MAX
0.625 MAX
0.010 0.005
0.370 MAX 0.175 0.125
0.150 Ref
0.100 Typ 17 x 0.100 1.700 Ref.
0.620 0.590
5 EDI8F82046C Rev. 4.0 4/96 ECO#7470
Electronic Designs Incorporated * One Research Drive * Westborough, MA 01581USA * 508-366-5151 * FAX 508-836-4850 * Electronic Designs Europe Ltd. * Shelley House, The Avenue * Lightwater, Surrey GU18 5RF United Kingdom * 01276 472637 * FAX: 01276 473748 Electronic Designs Inc. reserves the right to change specifications without notice. CAGE No. 66301 6 EDI8F82046C Rev. 4.0 4/96 ECO#7470
EDI8F82046C
2Megx8 SRAM Module

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